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The monolithically integrated RF switch was developed using micro electromechanical system (MEMS) design and ultrananocrystalline diamond (UNCD) technology to facilitate the integration of all necessary "passive" RF front-end functions on a single complimentary metal-oxide semiconductor (CMOS) chip.
Ultrananocrystalline Diamond (UNCD) Mechanical Seals, researched and developed by Argonne National Laboratory, Ill., Advanced Diamond Technologies Inc., Romeoville, Ill., and John Crane Inc., Morton Grove, Ill., stands out as competition for SiC.
In 2002, a large-area deposition system (winner of a 2003 R&D 100 Award) was created for applying UNCD to semiconductor wafers, but the potential for making mechanical seals with it was underestimated at the time.
The material, called UNCD (for ultra-nanocrystalline diamond), features grain sizes from 3 to 300 nm in size and layers just 1 to 2 [micro]m thick.
The UNCD process results in a phase-pure film, which is deposited on standard silicon wafers to create ADT's UNCD diamond on silicon (DoSi) products.
Low temperature deposition opens the door to the integration of UNCD with active electronics.
Phase-pure ultrananocrystalline diamond (UNCD) films have a unique microstructure (2- to 5-nm grain sizes) that offers mechanical properties virtually indistinguishable from those of single-crystal diamond for improved performance in almost every type of application.
The scalable microwave-plasma-enhanced CVD (MPCVD) process lays uniform, fast-growing, large area UNCD films on a range of substrates.
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