The total dielectric isolation of the channel in the UTBB FD-SOI creates lower gate and source/drain capacitance.
The technology used is the 28 nm UTBB FD-SOI LVT_NFET from STMicroelectronics.
The benefits of the technology UTBB FD-SOI used are explained, and the effects of the body bias technique are showed.
Cesana, "UTBB FD-SOI: a Process/Design symbiosis for breakthrough energy-efficiency," Design Automation & Test in Europe Conference & Exhibition (DATE), 2013, pp.
Nauta, "5.5 A forward-body-bias tuned 450 MHz gm-c 3rd-order low-pass filter in 28nm utbb fd-Soi with >1dBvp iip3 over a 0.7-to-1 V supply," in ISSCC Dig.