UWBGUniversity of Washington Botanic Gardens
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To create the technology, Sandia National Laboratories grew ultra-wide bandgap (UWBG) aluminum gallium nitride (AlGaN) materials and from them fabricated an A10.3Ga0.7N PiN diode with a breakdown voltage > 1600 V and an AlN/A10.85Ga0.15N high electron mobility transistor (HEMT) with a breakdown voltage > 800 V, one of the highest-bandgap transistor ever reported.