VACNTVertically Aligned Carbon Nanotube
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In this study, we reported a simple approach that used premade monodisperse [Fe.sub.3][O.sub.4] nanoparticles (NPs), ~3.5nm in size, as the catalysts and self-assembled silicalite-1 monolayer as the support layer to synthesize VACNT arrays by catalytic CVD (CCVD).
VACNT arrays on the Z/Si were synthesized according to the experimental procedures described above.
Therefore, the high density of NPs on the substrate could be retained to guarantee the synthesis of VACNT arrays with thinner diameters.
In this study, we reported the synthesis of vertically-aligned carbon nanotube (VACNT) arrays by using monodisperse magnetic [Fe.sub.3][O.sub.4] NPs with the size of ca.
As far as we know, this is the first report succeeding in VACNT synthesis using the assembled silicalite-1 monolayer as the support layer rather than intermediate AAO scaffold and others.
The VACNT-Si specimens were placed with the Si substrate on the incident bar side and the VACNT coating facing the transmission bar side.
As mentioned previously, the combination of the soft VACNT forest layer with the hard silicon wafer presented novel challenges for SHPB testing.
A fundamental knowledge and understanding of the dynamic behavior of vertically aligned carbon nanotubes (VACNTs) with functionally graded stiffness modulus is needed to understand the energy transfer mechanisms and their dependence on the microstructures of carbon nanotube (CNT) ensembles.
With the ready availability of freestanding VACNTs, integrating high flexural rigidity and damping into structures is feasible.
A well-established chemical vapor deposition approach is used for the synthesis of the VACNTs on silicon wafers [1-4].
A typical scanning electron micrograph (SEM) of the synthesized VACNTs is shown in Figure 1.
The pure silicon wafer, being anisotropic, has two different Poisson ratios, and there are no data available for the VACNTs. As such, a reported [8] in-plane Poisson's ratio of [v.sub.xy] = 0.064 for silicon has been used for both pure Si wafer and the VACNT-Si DMA test specimens.