VJFETVertical Junction Field Effect Transistor
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References in periodicals archive ?
1 shows the cross-sectional view of the proposed structure of SiC VJFET. In order to achieve desirable properties of a device it should be necessary to precisely consider the design parameters.
To the best of our knowledge the Lackner model used first time for the simulation of SiC VJFET. However, the expression for the total generation rate is given by
However, very little information available related to temperature dependent breakdown voltage in 4H-SiC VJFET.