Acronyms

FET

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FETField-Effect Transistor
FETFederal Excise Tax
FETField Effect Transistor
FETFuture and Emerging Technologies
FETFurther Education and Training (RSA)
FETFrozen Embryo Transfer (fertility treatment)
FETFair and Equitable Treatment (Bilateral Investment Treaty; international law)
FETFlaming Eternity (Yu-Gi-Oh! Cards)
FETFast Ethernet Transceiver
FETFurther-Eastern European Time (time zone)
FETFlash Emulation Tool (various companies)
FETFar East Time
FETFast Ethernet
FETFedora Engineering Team
FETFemale Engagement Team (US Marine Corps)
FETFinancial Economic Theory (Society of Actuaries)
FETFalange Española Tradicionalista (Spanish political party)
FETField Evaluation Trial
FETForensic Evidence Technician (law enforcement)
FETFreunde Elektronischer Tanzmusik (German: Friends Electric Dance Music)
FETFédération Espérantiste du Travail (French: Esperanto Federation of Labor)
FETFrance Express Topo (French stoneware company)
FETFoundation on Economic Trends
FETFlight Elapsed Time
FETFighter Engine Team
FETForsvarets Efterretningstjeneste (Danish Defense Intelligence Agency)
FETForced Expiratory Technique (chest physiotherapy)
FETFrance Européenne Télécoms (French: France European Telecoms)
FETFamilial Essential Tremor
FETFarEastTone
FETFICS Ethics Test
FETField Engineering Training
FETFirewall Evaluation Team
FETFollow-on Equipment Training
FETFacilities Electrical Team
FETFleet Evaluation Trial
FETFull Expertise Team
FETFunctional Equivalency Testing
FETField Engineering Team
FETFederal Electoral Tribunal judiciary For electoral misconducts)
FETFunctional Equipment Transfer
FETFlowline End Termination
FETFederal Election Tribunal
FETFluid Energy Theory
FETFacilities Engineering Team
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References in periodicals archive
In field-effect transistors with a control p-n junction, these parameters are ([10.sup.7]-[10.sup.9]) [OMEGA] [20].
Matsumoto, "Direct electrical detection of DNA hybridization based on electrolyte-gated graphene field-effect transistor," Japanese Journal of Applied Physics, vol.
Gaggero-Sager, "A simple model for atomic layer doped field-effect transistor (ALD-FET) electronic states," Rev.
Algorithm of the three-dimensional field-effect transistor of the adequate selection in the integral three-dimensional structure by estimating local oxide influence
The topics include GaAs devices, phase diagrams and crystal growth of compound semiconductors, plasma processing and dry etching, Schottky diodes and field-effect transistor processing, backend processing and through-wafer vias, and radio frequency microelectromechanical systems.
Wang and his team used thin bismuth telluride nanoribbons as conducting channels in field-effect transistor structures.
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