GaAs

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Related to gallium arsenide: Gallium Arsenide Laser
AcronymDefinition
GaAsGallium Arsenide
GaAsGame as a Service
GaAsGenerally Accepted Auditing Standard
GaAsGuyot Adrien & Arnold Song (band)
GaAsGeneral Atomics Aeronautical Systems Inc
GaAsGuandong Academy of Agricultural Sciences (China)
GaAsGeneral Arts and Science (college program; Canada)
References in periodicals archive ?
Furthermore, optimizing the dimensions of the nanowire, improving the quality of the gallium arsenide and using better electrical contacts to extract the current could increase the prototype's efficiency.
Scientists fabricated gallium nitride semiconductor wafers in increasingly larger sizes, from 2-inch diameter silicon carbide substrates to 4-inch wafers to match the existing gallium arsenide material standard.
Firstly, the advanced features, higher performance and low power consumptions that are enabled by the use of gallium arsenide mean that the volume of our products being used in handsets and other wireless devices is growing substantially faster than the overall handset market.
In turn, the group identified 46 additional substances for regulation, among them nickel, beryllium, gallium arsenide, liquid crystals and rosin (as in rosin flux).
Typically, manufacturers create microchip lasers from exotic--and expensive--semiconductor compounds such as gallium arsenide or indium phosphide.
Volume 86 focuses on cobalt in hard-metals and cobalt sulfate, gallium arsenide, indium phosphide, and vanadium pentoxide (IARC, in press a) In our article (Siemiatycki et al.
The model XB1006 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage buffer amplifier that offers ultra wide bandwidth and high dynamic range.
TELECOMWORLDWIRE-10 September 2004-Strategy Analytics publishes report on Gallium Arsenide microelectronics industry(C)1994-2004 M2 COMMUNICATIONS LTD http://www.m2.com
NIST and the National Research Council of Canada (NRC) recently completed a bilateral comparison of routine spectral responsivity calibrations from 250 nm to 1800 nm, using silicon, germanium, and indium gallium arsenide photodiodes as transfer standards.
Electronic scrap can contain the following hazardous materials: asbestos, cadmium, lead, thallium, beryllium, arsenic, gallium arsenide, antimony, bismuth, chromium, hexavalent chromium, cobalt, nickel, tin, ,selenium, lithium, PCBs, PCNs, radium bromide tubes, krypton tubes and zinc.
Instead of requiring clean-room facilities (as used in conventional polycrystalline silicone or crystalline gallium arsenide photovoltaics), cadmium selenide nanocrystals are grown under relatively dirty conditions in a beaker solution.